MOSFET - N Channel - 4.5A - 500V - IRF830PBF - TO220
The IRF830PBF is a robust N-Channel MOSFET designed for high-voltage, high-speed switching applications. With a drain-to-source voltage rating of 500V and a continuous drain current of 4.5A at 25°C, it is well-suited for use in power supplies, motor control circuits, and other demanding electronic systems.
Key Features:
-
High Voltage Capability: Supports a maximum drain-to-source voltage (Vdss) of 500V, making it suitable for high-voltage applications.
-
Significant Current Handling: Capable of continuous drain current (Id) up to 4.5A at 25°C, accommodating substantial power loads.
-
Efficient Switching Performance: Features a gate charge (Qg) of 38 nC at 10V, facilitating rapid switching with minimal delay.
-
Low On-Resistance: Exhibits a maximum Rds(On) of 1.5 Ohms at 2.7A and 10V, ensuring efficient conduction with reduced power loss.
-
Thermal Stability: Designed to operate effectively across a wide temperature range, maintaining performance in varying environmental conditions.
Technical Specifications:
| Attribute | Specification |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) |
| Drain-to-Source Voltage (Vdss) | 500V |
| Continuous Drain Current (Id) | 4.5A (at 25°C) |
| Gate-to-Source Voltage (Vgs) | ±20V |
| Gate Charge (Qg) | 38 nC (at Vgs = 10V) |
| Threshold Voltage (Vgs(th)) | 4V (at Id = 250µA) |
| On-Resistance (Rds(On)) | 1.5 Ohms (Max) at Id = 2.7A, Vgs = 10V |
| Operating Temperature Range | -55°C to 150°C |
| Package Type | TO-220 |
This MOSFET is ideal for applications requiring high-speed switching and efficient power management, such as inverters, converters, and motor drivers. Its high voltage and current ratings, combined with low on-resistance, make it a reliable choice for demanding electronic designs.
The IRF830PBF is a robust N-Channel MOSFET designed for high-voltage, high-speed switching applications. With a drain-to-source voltage rating of 500V and a continuous drain current of 4.5A at 25°C, it is well-suited for use in power supplies, motor control circuits, and other demanding electronic systems.
Key Features:
-
High Voltage Capability: Supports a maximum drain-to-source voltage (Vdss) of 500V, making it suitable for high-voltage applications.
-
Significant Current Handling: Capable of continuous drain current (Id) up to 4.5A at 25°C, accommodating substantial power loads.
-
Efficient Switching Performance: Features a gate charge (Qg) of 38 nC at 10V, facilitating rapid switching with minimal delay.
-
Low On-Resistance: Exhibits a maximum Rds(On) of 1.5 Ohms at 2.7A and 10V, ensuring efficient conduction with reduced power loss.
-
Thermal Stability: Designed to operate effectively across a wide temperature range, maintaining performance in varying environmental conditions.
Technical Specifications:
| Attribute | Specification |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) |
| Drain-to-Source Voltage (Vdss) | 500V |
| Continuous Drain Current (Id) | 4.5A (at 25°C) |
| Gate-to-Source Voltage (Vgs) | ±20V |
| Gate Charge (Qg) | 38 nC (at Vgs = 10V) |
| Threshold Voltage (Vgs(th)) | 4V (at Id = 250µA) |
| On-Resistance (Rds(On)) | 1.5 Ohms (Max) at Id = 2.7A, Vgs = 10V |
| Operating Temperature Range | -55°C to 150°C |
| Package Type | TO-220 |
This MOSFET is ideal for applications requiring high-speed switching and efficient power management, such as inverters, converters, and motor drivers. Its high voltage and current ratings, combined with low on-resistance, make it a reliable choice for demanding electronic designs.